Semiconductor devices to withstand voltage of 20,000 volts（２万ボルトの電圧に耐えられる半導体素子）

The development of semiconductor devices for substation equipment to withstand the voltage of 20,000 volts of the world's highest level, the research group of the (semiconductor engineering) was successful woody Professor, Graduate School of Engineering, Kyoto University. To reduce the power loss that occurs when power company substation when to send power is possible, it is expected a large power savings.

According to Professor woody plant, the breakdown voltage of the device is used in semiconductor device, such as substation equipment, using materials of the current mainstream silicon from 6,000 to 8,000 volts. This time, it was successful to the breakdown voltage of 20,000 volts or more times to use the silicon carbide, such as the shape of the element.

Also increases as the power conversion efficiency of the breakdown voltage of the device capacity is increased. If your facility to convert 100 to 200 volts for residential use from the general high-voltage electrical power lines of 6600 volts, the device breakdown voltage of 20,000 volts is approximately three times the voltage is required to ensure safety. Is currently running at a lower voltage, but in stages by connecting a plurality of elements, there is a loss of about 10% each time. With the element of 20,000 volts pressure, that it is possible to reduce the loss.

20,000 volts and is incredible. It is so considerable power savings can be expected. I hope that promoting further research for practical use.



世界最高レベルの２万ボルトの電圧に耐えられる変電設備用の半導体素子の開発に、京都大工学研究科の木本教授（半導体工学）の研究 グループが成功した。電力会社が電力を送る際に生じる変電時の電力ロスを少なくすることが可能で、大きな節電効果が期待されるという。
　木本教授によると、半導体素子は変電設備などに使われ、現在主流のケイ素を材料にした素子の耐圧は６０００〜８０００ボルト。今回は、炭化ケイ素を使い、素子の形状を工夫するなどして倍以上の２万ボルトの耐圧に成功したという。
　素子の耐圧能力が上がるほど電力の変換効率も上がる。６６００ボルトの高圧電線から一般住宅用の １００〜２００ボルトに変換する設備の場合、安全性確保のために電圧の約３倍の２万ボルトの耐圧素子が必要とされる。現在は、複数の素子をつないで段階的 に電圧を下げているが、そのたびに１０％程度のロスがある。耐圧２万ボルトの素子を使えば、ロスを少なくすることが可能という。
　２万ボルトとは凄いですね。かなりの節電効果が期待できそうですね。実用化に向けて更なる研究を進めて欲しいですね。